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IBM11T8645HP-60T 参数 Datasheet PDF下载

IBM11T8645HP-60T图片预览
型号: IBM11T8645HP-60T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 8MX64, 60ns, CMOS]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 32 页 / 903 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 last ship)  
IBM11T8645HP  
8M x 64 144 PIN SO DIMM  
Presence Detect Read and Write Cycle  
-70  
Symbol  
Parameter  
Unit  
Notes  
Min  
Max  
80  
fSCL  
TI  
SCL Clock Frequency  
kHZ  
ns  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
Noise Suppression Time Constant at SCL, SDA Inputs  
SCL Low to SDA Data Out Valid  
Time the Bus Must Be Free before a New Transmission Can Start  
Start Condition Hold Time  
100  
7.0  
tAA  
0.3  
6.7  
4.5  
6.7  
4.5  
6.7  
0
tBUF  
tHD:STA  
tLOW  
tHIGH  
tSU:STA  
tHD:DAT  
tSU:DAT  
tr  
Clock Low Period  
Clock High Period  
Start Condition Setup Time(for a Repeated Start Condition)  
Data in Hold Time  
Data in Setup Time  
500  
ns  
µs  
ns  
µs  
ns  
ms  
SDA and SCL Rise Time  
1
tf  
SDA and SCL Fall Time  
300  
tSU:STO  
tDH  
Stop Condition Setup Time  
6.7  
Data Out Hold Time  
300  
tWR  
Write Cycle Time  
15  
1
1. The write cycle time(tWR) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle.  
During the write cycle, the bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and  
the device does not respond to its slave address.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H3164  
GA14-4479-02  
Rev 11/97  
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