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IBM11N16845CB-6RJ 参数 Datasheet PDF下载

IBM11N16845CB-6RJ图片预览
型号: IBM11N16845CB-6RJ
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 16MX72, 60ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 29 页 / 322 K
品牌: IBM [ IBM ]
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Preliminary
IBM11N16845BB
IBM11N16845CB
16M x 72 Super EOS Module
Read Cycle
-6R
Symbol
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RRH
t
RAL
t
CLZ
t
OES
t
ORD
t
CDD
t
OEZ
t
OFF
1.
2.
3.
4.
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
CAS to Output in Low-Z
OE setup time prior to CAS
OE setup time prior to RAS (Hidden Refresh)
CAS to D
IN
Delay Time
Output Buffer Turn-off Delay from OE
Output Buffer Turn-off Delay
Parameter
Min
0
0
0
30
0
5
0
15
Max
60
18
30
15
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
4
4, 6
3
3
1, 2
1, 2
1, 2
1, 2
Unit
Notes
Measured with the specified current load and 100pF.
Access time is determined by the latter of t
RAC
, t
CAC
, t
CPA
, t
AA,
t
OEA
.
Either t
RCH
or t
RRH
must be satisfied.
t
OFF
(max) and t
OEZ
(max) define the time at which the output achieves the open circuit condition and is not referenced to output
voltage levels.
5. Either t
CDD
or t
ODD
must be satisfied.
6. t
OFF
is referenced from the rising edge of RAS or CAS , whichever is last.
75H5487
GA14-4642-00
Revised 11/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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