IBM11N16845BB
IBM11N16845CB
Preliminary
16M x 72 Super EOS Module
Write Cycle (Early Write)
tRC
tRAS
tRP
VIH
RAS
VIL
tCSH
tCRP
tRCD
tRSH
VIH
CAS
tCAS
VIL
tRAD
tASR
tASC
tRAH
tCAH
VIH
VIL
Address
Row
Column
tWRH
tWRP
tWCS
tWCH
VIH
VIL
tWP
WE
OE
NOTE 1
VIH
VIL
tDS
tDH
VIH
VIL
DIN
Valid Data In
VOH
VOL
DOUT
Hi-Z
NOTE 1: Implementing WE at RAS time During a Read or Write Cycle is optional.
: “H” or “L”
Doing so will facilitate compatibility with future EDO DRAMs.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H5487
GA14-4642-00
Revised 11/96
Page 13 of 28