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IBM11N16845CB-6RJ 参数 Datasheet PDF下载

IBM11N16845CB-6RJ图片预览
型号: IBM11N16845CB-6RJ
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 16MX72, 60ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 29 页 / 322 K
品牌: IBM [ IBM ]
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IBM11N16845BB
IBM11N16845CB
16M x 72 Super EOS Module
Preliminary
Write Cycle
-6R
Symbol
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
Write Command Set Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
D
IN
Setup Time
D
IN
Hold Time
Parameter
Min
0
10
10
10
10
0
12
Max
ns
ns
ns
ns
ns
ns
ns
2
2
1
Unit
Notes
1. t
WCS
, t
RWD
, t
CWD
, and t
AWD
are not restrictive parameters. They are included in the data sheet as electrical characteristics only. If
t
WCS
t
WCS
(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle; If t
RWD
t
RWD
(min.), t
CWD
t
CWD
(min.) and t
AWD
t
AWD
(min.), the cycle is a Read-Modify-Write cycle and the data will
contain read from the selected cell: If neither of the above sets of conditions are met, the condition of the data (at access time) is
indeterminate.
2. Data-in set-up and hold is measured from the latter of the two timings, CAS or WE.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H5487
GA14-4642-00
Revised 11/96
Page 8 of 28