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IBM11M2645H-70 参数 Datasheet PDF下载

IBM11M2645H-70图片预览
型号: IBM11M2645H-70
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 2MX64, 70ns, CMOS, PDMA168]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 29 页 / 351 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 last ship)  
IBM11M2645H  
IBM11M2645HB  
2M x 64 DRAM MODULE  
Refresh Cycle  
-60  
-70  
Symbol  
Parameter  
Unit  
Notes  
Min  
8
Max  
Min  
8
Max  
CAS Hold Time  
(CAS before RAS Refresh Cycle)  
tCHR  
tCSR  
tWRP  
tWRH  
ns  
ns  
ns  
ns  
CAS Setup Time  
(CAS before RAS Refresh Cycle)  
10  
15  
8
10  
15  
8
WE Setup Time  
(CAS before RAS Refresh Cycle)  
WE Hold Time  
(CAS before RAS Refresh Cycle)  
tRPC  
tREF  
RAS Precharge to CAS Hold Time  
Refresh Period  
3
3
ns  
32  
32  
ms  
1
1. 2048 refreshes are required every 32ms.  
Presence Detect Read Cycle  
-60  
-70  
Symbol  
Parameter  
Unit  
Notes  
Min  
0
Max  
Min  
Max  
tPD  
PDE to Valid Presence Detect Data  
10  
10  
0
10  
10  
ns  
ns  
1
2
tPDOFF  
PDE Inactive to Presence Detects Inactive  
1. Measured with the specified current load and 100pF.  
2. tPDOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to output voltage levels.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
50H4197  
SA14-4614-02  
Released 5/96