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IBM0625404GT3B-10E 参数 Datasheet PDF下载

IBM0625404GT3B-10E图片预览
型号: IBM0625404GT3B-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 75 页 / 1245 K
品牌: IBM [ IBM ]
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IBM0625404GT3B IBM0625164GT3B  
IBM0625804GT3B IBM06254B4GT3B  
256Mb Double Data Rate Synchronous DRAM  
Advance  
Power-Down  
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down  
occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs  
when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down  
deactivates the input and output buffers, excluding CK, CK and CKE. The DLL is still running in Power Down  
mode, so for maximum power savings, the user has the option of disabling the DLL prior to entering Power-  
down. In that case, the DLL must be enabled after exiting power-down, and 200 clock cycles must occur  
before a Read command can be issued. In Power Down mode, CKE Low and a stable clock signal must be  
maintained at the inputs of the DDR SDRAM, and all other input signals are “Don’t Care”. However, power-  
down duration is limited by the refresh requirements of the device, so in most applications, the self refresh  
mode is preferred over the DLL-disabled power-down mode.  
The power-down state is synchronously exited when CKE is registered HIGH (along with a Nop or Deselect  
command). A valid, executable command may be applied one clock cycle later.  
Power Down  
CK  
CK  
t
t
IS  
IS  
CKE  
Command  
VALID  
NOP  
VALID  
NOP  
No column  
access in  
progress  
Exit  
power down  
mode  
Don’t Care  
Enter Power Down mode  
(Burst Read or Write operation  
must not be in progress)  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997  
10/99  
Page 44 of 75  
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