IBM0625404GT3B IBM0625164GT3B
IBM0625804GT3B IBM06254B4GT3B
256Mb Double Data Rate Synchronous DRAM
Advance
Write to Precharge: Interrupting (Burst Length = 4 or 8)
Maximum DQSS
T5 T6
T1
T2
T3
T4
CK
CK
Write
NOP
NOP
NOP
PRE
NOP
Command
t
WR
BA (a or all)
BA a, COL b
Address
t
t
(max)
RP
DQSS
2
DQS
DQ
DI a-b
1
1
3
3
DM
Minimum DQSS
T5 T6
T1
T2
T3
T4
CK
CK
Write
NOP
NOP
NOP
PRE
NOP
Command
t
WR
BA a, COL b
BA (a or all)
Address
t
t
(min)
RP
2
DQSS
DQS
DQ
DI a-b
3
3
1
1
DM
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
is referenced from the first positive CK edge after the last desired data in pair.
t
WR
The Precharge command masks the last 2 data elements in the burst, for burst length = 8.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
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Use is further subject to the provisions at the end of this document.
29L0011.E36997
10/99
Page 40 of 75
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