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IBM0625404GT3B-10E 参数 Datasheet PDF下载

IBM0625404GT3B-10E图片预览
型号: IBM0625404GT3B-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 75 页 / 1245 K
品牌: IBM [ IBM ]
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IBM0625164GT3B IBM0625404GT3B  
IBM06254B4GT3B IBM0625804GT3B  
Advance  
256Mb Double Data Rate Synchronous DRAM  
Precharge Command  
CK  
CK  
HIGH  
CKE  
CS  
RAS  
CAS  
WE  
A0-A9, A11, A12  
All Banks  
A10  
One Bank  
BA  
BA0, BA1  
BA = bank address  
(if A10 is Low, otherwise Don’t Care).  
Don’t Care  
Precharge  
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks.  
The bank(s) is available for a subsequent row access some specified time (t ) after the Precharge com-  
RP  
mand is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where  
only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged,  
inputs BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and  
must be activated prior to any Read or Write commands being issued to that bank.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997  
10/99  
Page 43 of 75  
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