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IBM0625404GT3B-10E 参数 Datasheet PDF下载

IBM0625404GT3B-10E图片预览
型号: IBM0625404GT3B-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 75 页 / 1245 K
品牌: IBM [ IBM ]
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IBM0625164GT3B IBM0625404GT3B  
IBM06254B4GT3B IBM0625804GT3B  
Advance  
256Mb Double Data Rate Synchronous DRAM  
Truth Table 2: Clock Enable (CKE)  
1. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.  
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.  
3. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n.  
4. All states and sequences not shown are illegal or reserved.  
CKE n-1  
CKEn  
Current State  
Command n  
Action n  
Notes  
1
Previous Current  
Cycle  
Cycle  
Self Refresh  
Self Refresh  
Power Down  
Power Down  
All Banks Idle  
All Banks Idle  
Bank(s) Active  
L
L
L
H
L
X
Maintain Self-Refresh  
Deselect or NOP  
X
Exit Self-Refresh  
L
Maintain Power-Down  
Exit Power-Down  
L
H
L
Deselect or NOP  
Deselect or NOP  
AUTO REFRESH  
Deselect or NOP  
H
H
H
Precharge Power-Down Entry  
Self Refresh Entry  
L
L
Active Power-Down Entry  
See “Truth Table 3: Current State  
Bank n - Command to Bank n  
(Same Bank)” on page 46  
H
H
1. Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (t  
) period. A mini-  
XSNR  
mum of 200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997  
10/99  
Page 45 of 75  
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