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IBM0612804GT3B-8N 参数 Datasheet PDF下载

IBM0612804GT3B-8N图片预览
型号: IBM0612804GT3B-8N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1362 K
品牌: IBM [ IBM ]
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IBM0612404GT3B  
IBM0612804GT3B  
Advance Rev 0.2  
128Mb Double Data Rate Synchronous DRAM  
Data Input (Write) (Timing Burst Length = 4)  
tDQSL  
tDQSH  
DQS  
DQ  
tDH  
tDS  
DI n  
tDH  
tDS  
DM  
DI n = Data In for column n.  
3 subsequent elements of data in are applied in programmed order following DI n.  
Don’t Care  
Data Output (Read) (Timing Burst Length = 4)  
CK  
CK  
tHP  
tHP  
tHP  
tHP1  
tHP2  
tHP3  
tHP4  
DQS  
tQH2  
tQH4  
tDQSQ  
tQH1  
tDQSQ  
tQH3  
DQ  
tDQSQ  
tDQSQ  
t
is the half cycle pulse width for each half cycle clock. t is referenced to the clock duty cycle only  
HP  
HP  
and not to the data strobe (DQS) duty cycle.  
Data Output hold time from Data Strobe is shown as t . t is a function of the clock high or low time (t  
)
HP  
QH QH  
for that given clock cycle. Note correlation of t to t in the diagram above (t  
to t  
, etc.).  
QH1  
HP  
QH  
HP1  
t
(max) occurs when DQS is the earliest among DQS and DQ signals to transition.  
DQSQ  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350  
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