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IBM0612804GT3B-8N 参数 Datasheet PDF下载

IBM0612804GT3B-8N图片预览
型号: IBM0612804GT3B-8N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1362 K
品牌: IBM [ IBM ]
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IBM0612404GT3B  
IBM0612804GT3B  
Advance Rev 0.2  
Power-Down  
128Mb Double Data Rate Synchronous DRAM  
Power-down is entered when CKE is registered low (no accesses can be in progress). If power-down occurs  
when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there  
is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates  
the input and output buffers, excluding CK, CK and CKE. The DLL is still running in Power Down mode, so for  
maximum power savings, the user has the option of disabling the DLL prior to entering Power-down. In that  
case, the DLL must be enabled after exiting power-down, and 200 clock cycles must occur before a Read  
command can be issued. In Power Down mode, CKE Low and a stable clock signal must be maintained at  
the inputs of the DDR SDRAM, and all other input signals are “Don’t Care”. However, power-down duration is  
limited by the refresh requirements of the device, so in most applications, the self refresh mode is preferred  
over the DLL-disabled power-down mode.  
The power-down state is synchronously exited when CKE is registered high (along with a Nop or Deselect  
command). A valid, executable command may be applied one clock cycle later.  
Power Down  
CK  
CK  
t
t
IS  
IS  
CKE  
Command  
VALID  
NOP  
VALID  
NOP  
No column  
access in  
progress  
Exit  
power down  
mode  
Don’t Care  
Enter Power Down mode  
(Burst Read or Write operation  
must not be in progress)  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350  
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