IBM0612404GT3B
IBM0612804GT3B
128Mb Double Data Rate Synchronous DRAM
Advance Rev 0.2
Write to Precharge: Non-Interrupting (Burst Length = 4)
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
NOP
PRE
Command
t
WR
BA (a or all)
BA a, COL b
Address
t
t
(max)
RP
DQSS
DQS
DQ
DI a-b
DM
Minimum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
NOP
PRE
Command
t
WR
BA (a or all)
BA a, COL b
Address
t
RP
t
(min)
DQSS
DQS
DQ
DI a-b
DM
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
t
is referenced from the first positive CK edge after the last data in pair.
WR
Don’t Care
A10 is Low with the Write command (Auto Precharge is disabled).
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Use is further subject to the provisions at the end of this document.
06K0566.F39350
5/00
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