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IBM0612404GT3B-75N 参数 Datasheet PDF下载

IBM0612404GT3B-75N图片预览
型号: IBM0612404GT3B-75N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1017 K
品牌: IBM [ IBM ]
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IBM0612404GT3B  
IBM0612804GT3B  
128Mb Double Data Rate Synchronous DRAM  
Advance Rev 0.2  
Write Burst (Burst Length = 4)  
Maximum DQSS  
T1  
T2  
T3  
T4  
CK  
CK  
Write  
NOP  
NOP  
NOP  
Command  
BA a, COL b  
Address  
t
(max)  
DQSS  
DQS  
DQ  
Dla-b  
DM  
t
(max)  
t
(min)  
QCSW  
QCHW  
QFC  
(Optional)  
Minimum DQSS  
T4  
T1  
T2  
T3  
CK  
CK  
Write  
NOP  
NOP  
NOP  
Command  
Address  
BA a, COL b  
t
(min)  
DQSS  
DQS  
DQ  
Dla-b  
DM  
t
(max)  
QCSW  
t
(max)  
QCHW  
QFC  
DI a-b = data in for bank a, column b.  
3 subsequent elements of data in are applied in the programmed order following DI a-b.  
A non-interrupted burst is shown.  
A10 is Low with the Write command (Auto Precharge is disabled).  
QFC is an open drain driver. Its output high level is achieved through an externally connected pull up resistor connected to V  
.
DDQ  
Don’t Care  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350  
5/00  
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