IBM0165165B
IBM0165165P
ADVANCED
4M x 16 12/10 EDO DRAM
Write Cycle
-50
-60
Symbol
Parameter
Units
Notes
1
Min.
0
Max.
—
Min.
0
Max.
—
tWCS
tWCH
tWP
Write Command Set Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
DIN Setup Time
ns
ns
ns
ns
ns
ns
ns
7
—
10
10
10
10
0
—
7
—
—
tRWL
tCWL
tDS
8
—
—
8
—
—
0
—
—
2
2
tDH
DIN Hold Time
7
—
10
—
1. tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical charac-
teristics only. If tWCS ≥ tWCS(min.), the cycle is an early write cycle and the data pin will remain open circuit (high impedance)
through the entire cycle. If tRWD ≥ tRWD(min.), tCWD ≥ tCWD(min.), tAWD ≥ tAWD(min.), and tCPWD ≥ tCPWD(min.)(Fast Page Mode), the
cycle is a Read-Modify-Write cycle and the data out will contain data read from the selected cell. If neither of the above sets of con-
ditions is satisfied, the condition of the data out (at access time) is indeterminate.
2. These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in Read-Modify-Write cycles.
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
27H6253
SA14-4239-02
10/96
Page 7 of 31
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