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IBM0165165BT3C-50 参数 Datasheet PDF下载

IBM0165165BT3C-50图片预览
型号: IBM0165165BT3C-50
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 X 0.825 INCH, PLASTIC, TSOP-50]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 350 K
品牌: IBM [ IBM ]
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IBM0165165B  
IBM0165165P  
ADVANCED  
4M x 16 12/10 EDO DRAM  
DC Electrical Characteristics (TA = 0 to +70°C, VCC = 3.3 ± 0.3V)  
Symbol  
Parameter  
Min.  
Max.  
140  
115  
Units  
mA  
Notes  
1, 2, 3  
Operating Current  
-50  
-60  
ICC1  
Average Power Supply Operating Current  
(RAS, CAS, Address Cycling: tRC = tRC min)  
Standby Current (LVTTL)  
Power Supply Standby Current  
(RAS = CAS = VIH)  
ICC2  
ICC3  
ICC4  
2
mA  
mA  
mA  
µA  
RAS Only Refresh Current  
Average Power Supply Current, RAS Only Mode  
(RAS Cycling, CAS = VIH: tRC = tRC min)  
-50  
-60  
-50  
-60  
140  
115  
105  
85  
1, 3  
EDO (Hyper Page) Mode Current  
Average Power Supply Current, Hyper Page Mode  
(RAS = VIL, CAS, Address Cycling: tPC = tPC min)  
1, 2, 3  
Standby Current (LVCMOS)- Low Power  
Power Supply Standby Current  
(RAS = CAS = VCC - 0.2V)  
200  
1
ICC5  
Standby Current (LVCMOS)- Standard Power  
Power Supply Standby Current  
(RAS = CAS = VCC - 0.2V)  
mA  
mA  
CAS Before RAS Refresh Current  
Average Power Supply Current, CAS Before RAS Mode  
(RAS, CAS, Cycling: tRC = tRC min)  
-50  
-60  
140  
115  
ICC6  
ICC7  
II(L)  
1, 2  
Self Refresh Current (LP version only)  
Average Power Supply Current during Self Refresh  
CBR cycle with RAS tRASS (min); CAS held low;  
WE = VCC - 0.2V; Addresses and DIN = VCC - 0.2V or 0.2V.  
µA  
µA  
-2  
400  
+2  
Input Leakage Current  
Input Leakage Current, any input  
(0.0 VIN VCC), All Other Pins Not Under Test = 0V  
Output Leakage Current  
(DOUT is disabled, 0.0 VOUT VCC  
IO(L)  
VOH  
VOL  
VOH  
VOL  
µA  
V
-2  
2.4  
+2  
)
Output High Level (LVTTL)  
Output “H” Level Voltage (IOUT = -2mA)  
Output Low Level (LVTTL)  
Output “L” Level Voltage (IOUT = +2mA)  
0.4  
V
Output High Level (LVCMOS)  
Output “H” Level Voltage (IOUT = -100µA)  
V
CC - 0.2  
V
4
4
Output Low Level (LVCMOS)  
Output “L” Level Voltage (IOUT = +100µA)  
0.2  
V
1. ICC1, ICC3, ICC4, ICC6 depend on cycle rate.  
2. ICC1, ICC4 depend on output loading. Specified values are obtained with the output open.  
3. Column address can be changed once or less while RAS =VIL and CAS =VIH.  
4. VOL (LVCMOS) and VOH (LVCMOS) levels are not intended for use as timing reference levels. LVCMOS levels are the quiescent  
state of a low impedance output driver, under the specified load condition.  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
27H6253  
SA14-4239-02  
10/96  
Page 5 of 31  
 
 
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