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IBM0164165BT3C-60 参数 Datasheet PDF下载

IBM0164165BT3C-60图片预览
型号: IBM0164165BT3C-60
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 X 0.825 INCH, PLASTIC, TSOP2-50]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 28 页 / 480 K
品牌: IBM [ IBM ]
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Discontinued (8/98 - last order; 12/98 last ship)
IBM0164165B
IBM0164165P
4M x 16 13/9 EDO DRAM
AC Characteristics
(T
A
=0 to +70°C, V
CC
=3.3
±
0.3V)
1. An initial pause of 100µs is required after power-up followed by 8 RAS only refresh cycles before proper device operation is
achieved. In case of using internal refresh counter, a minimum of 8 CAS before RAS refresh cycles instead of 8 RAS only refresh
cycles is required.
2. AC measurements assume t
T
=2ns.
3. V
IH
(min.) and V
IL
(max.) are reference levels for measuring timing of input signals. Also, transition times are measured between V
IH
and V
IL
.
4. Valid column addresses are only A0 through A8.
Read, Write, Read-Modify-Write and Refresh Cycle
(Common Parameters)
-50
Symbol
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
DZO
t
DZC
t
T
Parameter
Min.
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Col. Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE Delay Time From D
IN
CAS Delay Time From D
IN
Transition Time (Rise and Fall)
84
30
8
50
8
0
7
0
7
11
9
8
40
5
0
0
1
Max.
100k
100k
37
25
50
Min.
104
40
10
60
10
0
10
0
10
14
12
10
50
5
0
0
1
Max.
100k
100k
45
30
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
1
4
4
5
2
3
1
1
-60
Units
Notes
1. In a Test Mode Read cycle, the value of t
RAC
, t
AA
, t
CAC
and t
CPA
are delayed by 5ns from the specified value. These parameters
must be adjusted in Test Mode cycles by adding 5ns to the specified value. Associated timings must also be adjusted by 5ns.
2. Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(max.) limit, then access time is controlled by t
CAC
.
3. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If t
RAD
is
greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
4. Either t
DZC
or t
DZO
must be satisfied.
5. AC measurements assume t
T = 2ns.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
88H2012
GA14-4251-02
Revised 11/97
Page 6 of 28