1HY5DU561622FTP-5
HY5DU561622FTP-4
DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Speed
Unit
Note
Parameter
Symbol
Test Condition
4
5
One bank; Active - Read - Precharge;
Burst Length=4; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock
cycle; IOUT=0mA
Operating Current
IDD1
IDD2P
IDD2N
IDD3P
160
150
mA
mA
mA
mA
Precharge Power Down
Standby Current
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
20
80
55
20
70
50
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
Idle Standby Current
VIN=VREF for DQ, DQS and DM
Active Power Down
Standby Current
One bank active; Power down mode ; CKE=Low,
tCK=tCK(min)
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
Active Standby Current
IDD3N
90
80
mA
Burst=2;Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); IOUT=0mA
IDD4R
IDD4W
220
220
200
200
mA
mA
Operating Current
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
tRC=tRFC(min); All banks active
200
5
180
5
mA
CKE=<0.2V; External clock on; tCK=tCK(min)
mA
Rev. 1.1 / Mar. 2008
22
HYNIX [ HYNIX SEMICONDUCTOR ]
