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HY5DU281622ET-5 参数 Datasheet PDF下载

HY5DU281622ET-5图片预览
型号: HY5DU281622ET-5
PDF下载: 下载PDF文件 查看货源
内容描述: 128M ( 8Mx16 ) GDDR SDRAM [128M(8Mx16) GDDR SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 34 页 / 379 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY5DU281622ET  
AC Overshoot/Undershoot specifications for Address and Command pins  
Parameter  
Maximum peak amplitude allowwed for overshoot  
200MHz Specifications  
1.5 V  
1.5 V  
Maximum peak amplitude allowwed for undershoot  
The area between the overshoot signal and VDD must be less than or equal to(See below Fig)  
The area between the overshoot signal and GND must be less than or equal to(See below Fig)  
4.5 V-nS  
4.5 V-nS  
Max. amplitude=1.5V  
+5  
+4  
+3  
+2  
+1  
0
V
DD  
Volts  
(V)  
Ground  
-1  
-2  
Max. area=4.5V-ns  
-3  
0
1
2
3
4
5
6
Time(ns)  
AC Overshoot/Undershoot specifications for Data, Strobe and Mask Pins  
Parameter  
Maximum peak amplitude allowwed for overshoot  
200MHz Specifications  
1.2 V  
1.2 V  
Maximum peak amplitude allowwed for undershoot  
The area between the overshoot signal and VDD must be less than or equal to(See below Fig)  
The area between the overshoot signal and GND must be less than or equal to(See below Fig)  
2.4 V-nS  
2.4 V-nS  
Max. amplitude=1.2V  
+5  
+4  
+3  
+2  
+1  
0
V
DD  
Volts  
(V)  
Ground  
-1  
-2  
Max. area=2.4V-ns  
-3  
0
1
2
3
4
5
6
Time(ns)  
Rev. 0.5 / Jan. 2005  
25  
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