HY29F002T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Description
Test Setup
Min
Typ
Max
Unit
VIN = VSS to VCC,
VCC = VCC Max
ILI
Input Load Current
±1.0
µA
VCC = VCC Max,
A[9] = OE# = 12.5V
RESET# = 12.5 V
A[9], OE#, RESET# Input
Load Current4
ILIT
50
µA
µA
VOUT = VSS to VCC,
VCC = VCC Max
ILO
ICC1
ICC2
ICC3
Output Leakage Current
±1.0
VCC Active Read Current 1, 3
VCC Active Write Current 2, 3, 4
CE# = VIL, OE# = VIH
CE# = VIL, OE# = VIH
20
30
30
40
mA
mA
VCC CE# Controlled
CE# = OE# = VIH
RESET# = VIH
0.4
0.4
1.0
1.0
mA
mA
TTL Standby Current 3
VCC RESET# Controlled
TTL Standby Current 3
ICC4
RESET# = VIL
VIL
VIH
Input Low Voltage
Input High Voltage
-0.5
2.0
0.8
V
V
VCC + 0.5
Voltage for Electronic ID and
Temporary Sector Unprotect
VID
VOL
VOH
V
CC = 5.0V
11.5
12.5
0.45
V
V
VCC = VCC Min,
IOL = 12.0mA
Output Low Voltage
VCC = VCC Min,
IOH = -2.5 mA
Output High Voltage
2.4
3.2
V
V
VLKO
Low VCC Lockout Voltage 3
4.2
Notes:
1. Includes both the DC Operating Current and the frequency dependent component at 6 MHz. The read component of the
CC current is typically less than 2 ma/MHz with OE# at VIH.
I
2. ICC active while Automatic Erase or Automatic Program algorithm is in progress.
3. ICC max measured with VCC = VCC max.
4. Not 100% tested.
Rev. 4.1/May 01
20