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HY29F002TT-55 参数 Datasheet PDF下载

HY29F002TT-55图片预览
型号: HY29F002TT-55
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256K ×8 ) , 5伏只,闪存 [2 Megabit (256K x 8), 5 Volt-only, Flash Memory]
分类和应用: 闪存
文件页数/大小: 38 页 / 381 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY29F002T  
Write Pulse “Glitch” Protection  
Power-Up Write Inhibit  
Noise pulses of less than 5 ns (typical) on OE#,  
CE# or WE# do not initiate a write cycle.  
If WE# = CE# = VIL and OE# = VIH during power  
up, the device does not accept commands on the  
rising edge of WE#. The internal state machine is  
automatically reset to the Read mode on power-  
up.  
Logical Inhibit  
Write cycles are inhibited by asserting any one of  
the following conditions: OE# = VIL , CE# = VIH, or  
WE# = VIH. To initiate a write cycle, CE# and WE#  
must be a logical zero while OE# is a logical one.  
Sector Protection  
Additional data protection is provided by the  
HY29F002Ts sector protect feature, described  
previously, which can be used to protect sensitive  
areas of the Flash array from accidental or unau-  
thorized attempts to alter the data.  
Rev. 4.1/May 01  
18  
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