GM76V256CL/LL
Capacitance (
f = 1MH
Z
, T
A
= 25
C
)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Conditions
V
I
= 0V
V
O
= 0V
Min
-
-
Max
6
8
Unit
pF
pF
*Note: This parameter is sampled and not 100% tested.
Data Retention Characteristics
(T
A
= -25 ~ 85
C
)
Symbol
V
CCR
Parameter
Data Retention Supply Voltage
0 to +70C (LL)
Test Conditions
/CS > V
CCR
- 0.2V
Min
2.0
-
Typ
-
0.5
*1
0.5
*1
1
*1
1
*1
-
-
Max
3.6
7
10
Unit
V
I
CCR
Data Retention
Current
-25 to +85C (LLE)
0 to +70C (L)
-25 to +85C (LE)
V
CC
= 3.0V
/CS > 2.8V
-
-
-
uA
15
20
-
-
ns
ns
t
CDR
t
R
Chip Select to Data Retention Time
Operation Recovery Time
Refer to the figure
below
0
t
RC
*2
Notes:
1. Typ, Values are measured at 25
C
2. Read Cycle Time
Data Retention Timing
Data Retention Mode
V
CC
3.0V
t
CDR
t
R
2.2V
V
CCR
/CS
GND
/CS > V
CCR
- 0.2V
Note: When retaining data in standby mode, supply voltage can be lowered within a certain range.
Read or write cycle cannot be performed while the supply voltage is low.
50
HYNIX [ HYNIX SEMICONDUCTOR ]
