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GM76V256CLLT-85/E 参数 Datasheet PDF下载

GM76V256CLLT-85/E图片预览
型号: GM76V256CLLT-85/E
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, TSOP1-28]
分类和应用: ISM频段静态存储器光电二极管内存集成电路
文件页数/大小: 9 页 / 77 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM76V256CL/LL
DC Electrical Characteristics
(V
CC
=3.3V + 0.3V , T
A
= -25 ~ 85
C
)
GM76V256C
Symbol
Parameter
Input Leakage Current
Output Leakage Current
High Level Output Voltage
Low Level Output Voltage
Operating Supply Current
V
IN
= 0 to V
CC
Test Conditions
Min Typ Max
-1
-1
2.4
-
-
-
-
-
-
-
1
1
-
0.4
2
Unit
uA
uA
V
V
mA
I
I(L)
I
O(L)
V
OH
V
OL
I
CC
I
CC1
/CS = V
IH
or /OE = V
IH
or
WE = V
IL
, V< V
OUT
< V
CC
I
OH
= -1.0mA
I
OL
= 2.1mA
/CS = V
IL
,
V
IN
= V
IH
/V
IL,
I
I/O
= 0mA
/CS = V
IL
,
V
IN
= V
IH
/V
IL
I
I/O
= 0mA
t
cycle = Min, cycle
/CS = V
IL
,
V
IN
= V
IH
/V
IL
I
I/O
= 0mA
t
cycle = 1us, cycle
/CS = V
IH
0 to +70C (LL)
/CS < V
CC
-0.2V(LL)
-25 to +85C (LLE)
0 to +70C (L)
-25 to +85C (LE)
Average Operating Current
-
-
35
mA
I
CC2
Average Operating Current
-
-
5
mA
I
CCS1
I
CCS2
Standby Current (TTL)
Standby Current (CMOS)
-
-
-
-
-
-
-
-
-
-
0.5
10
15
20
30
mA
uA
uA
uA
uA
/CS < V
CC
-0.2V (L)
*TYP. Values are measured at 25
C
, V
CC
= 3.3V
45