GM76V256CL/LL
AC Operating Characteristics
(V
CC
=3.3V + 0.3V , T
A
= -25 ~ 85
C
)
Read Cycle
Symbol
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable Access Time
Output Hold Time
Chip Select Output Setup Time
Output Enable Output Setup Time
Chip Select Output Floating
Output Enable Output Floating
*2
*1
Condi-
tions
GM76V256C-85
Min
85
-
-
-
10
10
5
0
0
Max
-
85
85
45
-
-
-
30
30
GM76V256C-10
Min
100
-
-
-
15
10
5
0
0
Max
-
100
100
50
-
-
-
35
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
ACS
t
OE
t
OH
t
CLZ
t
OLZ
t
CHZ
t
OHZ
Write Cycle
Symbol
Parameter
Write Cycle Time
Chip Select Time
Address Enable Time
Address Set-up Time
Write Pulse Width
Address Hold Time
Input Data Setup Time
Input Data Hold Time
Write to Output in High-Z
*2
Output Active from End of Write
5
-
10
-
ns
*1
Condi-
tions
GM76V256C-85
Min
85
75
70
0
60
0
35
0
0
Max
-
-
-
-
-
-
-
-
30
GM76V256C-10
Min
100
80
80
0
70
0
40
0
0
Max
-
-
-
-
-
-
-
-
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
OW
*1 Test Conditions.
1. Input pulse level : 0.4V to 2.2V
2. tr = tf = 5ns
3. Input/output timing reference level : 1.5V
4. Output load C
L
= 100pF + 1TTL Load
*2 Test Conditions.
1. Input pulse level : 0.4V to 2.2V
2. tr = tf = 5ns
3. Input timing reference level : 1.5V
4. Output timing reference level :
+/-200mV (the level displacement from
stable output voltage level)
5. Output load C
L
= 5pF + 1TTL Load
46
HYNIX [ HYNIX SEMICONDUCTOR ]
