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GM76V256CLLT-85/E 参数 Datasheet PDF下载

GM76V256CLLT-85/E图片预览
型号: GM76V256CLLT-85/E
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, TSOP1-28]
分类和应用: ISM频段静态存储器光电二极管内存集成电路
文件页数/大小: 9 页 / 77 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM76V256CL/LL
Write Cycle 2
(/CS Controlled) (Note 1, 2, 3)
t
WC
ADD
t
AS
t
CW
/CS
t
AW
t
WP
/WE
t
WR
t
DW
D
IN
VALID DATA
t
DH
D
OUT
High-Z
Notes:
1. The internal write time of the memory is defined by the overlap of /CS low and /WE low. Both signals
must be low to initiate a write and either signal can terminate a write by going high. The data input
set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
2. Data I/O is high impedance if /OE = V
IH
.
3. If /CS goes high simultaneously with /WE high, the output remains in a high impedance state.
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