HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature @ Idd = 67 mA
20
Psat vs. Temperature @ Idd = 67 mA
20
18
P1dB (dBm)
Psat (dBm)
18
16
16
+25 C
+85 C
-40 C
14
+25 C
+85 C
-40 C
14
12
12
10
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
10
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Output IP3 vs. Temperature Idd = @ 67 mA
34
32
30
IP3 (dBm)
28
26
24
22
20
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
24
22
GAIN (dB) & P1dB (dBm)
20
18
16
14
12
60
GAIN
P1dB
Noise Figure
1.4
1.2
NOISE FIGURE (dB)
1
0.8
0.6
0.4
0.2
70
80
90
100
110
120
+25 C
+85 C
-40 C
SUPPLY CURRENT (mA)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+10 dBm
150 °C
0.451 W
144 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
67.2
67.4
67.6
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA)
60
70
Rbias (Ohms)
27
16
13
8.2
3.9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
80
100
120
7-3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
