HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• GSM/GPRS & EDGE
Features
Noise Figure: 1 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This LNA
has been optimized to provide 1.0 dB noise figure, 17
dB gain and +30 dBm output IP3 from a single supply
of +5V. The HMC382LP3 & HMC382LP3E feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC618LP3(E).
Electrical Specifi cations,
T
A
= +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for
1dB Compression (P1dB)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd1 + Idd2)
14
Min.
Typ.
1.7 - 1.9
17
0.01
1.0
13
10
37
16
0.015
1.3
12
Max.
Min.
Typ.
1.9 - 2.0
15
0.01
1.05
12
13
36
16
0.015
1.35
11
Max.
Min.
Typ.
2.0 - 2.1
14
0.01
1.15
11
12
35
15.5
0.015
1.45
9
Max.
Min.
Typ.
2.1 - 2.2
12
0.01
1.2
10
9
35
14
0.015
1.5
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
29.5
67
30
67
30
67
29.5
67
dBm
mA
* Rbias resistor value sets current. See application circuit herein.
7-1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
