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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Dual-Power-Supply Model:  
H8/3437F  
Single-Power-Supply Model:  
H8/3437F S-Mask Model  
Item  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MDCR  
MDS1 MDS0  
EXPE  
MDS1 MDS0  
Bit 7: Expanded mode enable (EXPE)  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
WSCR  
RAMS RAM0 CKDBL  
WMS1WMS0 WC1 WC0  
CKDBL FLSHE WMS1WMS0 WC1 WC0  
Bit 4: Flash memory control register  
enable (FLSHE)  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
FLMCR1  
FLMCR2—  
VPP  
EV  
PV  
E
P
FWE SWE  
EV  
PV  
E
P
Bit 7: Flash write enable (FWE)  
Bit 6: Software write enable (SWE)  
7
6
5
4
3
2
0
1
FLER  
ESU PSU  
Bit 7: Flash memory error (FLER)  
Bit 1: Erase setup (ESU)  
Bit 0: Program setup (PSU)  
7
6
5
4
3
2
1
0
EBR1  
EBR2  
LB7 LB6 LB5 LB4 LB3 LB2LB1 LB0  
This address is not used.  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
EB7 EB6 EB5 EB4 EB3 EB2EB1 EB0  
SB7 SB6 SB5 SB4 SB3 SB2SB1 SB0  
Erase block register (EBR2)  
EB0 (1 kbyte): H'0000 to H'03FF  
EB1 (1 kbyte): H'0400 to H'07FF  
EB2 (1 kbyte): H'0800 to H'0BFF  
EB3 (1 kbyte): H'0C00 to H'0FFF  
EB4 (28 kbytes): H'1000 to H'7FFF  
EB5 (16 kbytes): H'8000 to H'BFFF  
EB6 (12 kbytes): H'C000 to H'EF7F  
EB7 (2 kbytes): H'EF00 to H'F77F  
Details  
concerning  
flash memory  
See section 20, ROM (Dual-Power-  
Supply 60-Kbyte Flash Memory  
Version)  
See section 21, ROM (Single-Power-  
Supply 60-Kbyte Flash Memory  
Version)  
Electrical  
characteristics Characteristics  
See section 23, Electrical  
See section 23, Electrical  
Characteristics  
Registers See Appendix B, Registers  
See Appendix B, Registers  
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