HAT1021R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
–0.5
–0.4
–0.3
–0.2
–0.1
Pulse Test
Pulse Test
0.5
0.2
0.1
V
GS
= –2.5 V
–4 V
I
= –5 A
D
0.05
–2 A
–1 A
0.02
0.01
–6
Gate to Source Voltage
0
–2
–4
–8
–10
(V)
–0.2
–0.5 –1 –2
Drain Current
–5 –10 –20
V
I
(A)
D
GS
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
0.20
Pulse Test
Tc = –25 °C
20
10
5
0.16
0.12
0.08
0.04
–1 A, –2 A
75 °C
25 °C
I
= –5 A
D
V
= –2.5 V
GS
2
1
–1 A, –2 A, –5 A
–4 V
0
V
= –10 V
DS
Pulse Test
–5
(A)
0
–40
0.5
40
80
120
160
–0.2 –0.5 –1 –2
Drain Current I
–20
–10
Case Temperature Tc (°C)
D
4
HITACHI [ HITACHI SEMICONDUCTOR ]
