HAT1021R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
–30
4.0
3.0
2.0
1.0
10 µs
100 µs
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
–10
–3
–1
–0.3
–0.1
Operation in
this area is
limited by R
DS(on)
–0.03
–0.01
Ta = 25 °C
1 shot pulse
0
50
100
150
200
–0.1 –0.3
–1
–3
–10 –30 –100
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
–10 V –8 V
Typical Transfer Characteristics
–6 V
–5 V
–4.5 V
–50
–40
–30
–20
–10
–50
–40
–30
–20
–10
–4 V
Pulse Test
–3.5 V
Tc = –25 °C
25 °C
75 °C
–3 V
–2.5 V
–2 V
V
= –10 V
DS
V
GS
= –1.5 V
Pulse Test
0
–1
Gate to Source Voltage
0
–2
–3
–4
GS
–5
–2
–4
–6
–8
–10
(V)
V
(V)
Drain to Source Voltage
V
DS
3
HITACHI [ HITACHI SEMICONDUCTOR ]
