HAT1021R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
– 20
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
± 10
V
– 5.5
A
Note1
Drain peak current
ID(pulse)
– 44
A
Body–drain diode reverse drain current IDR
– 5.5
A
Channel dissipation
Pch Note2
2.5
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS – 20
ID = – 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 8 V, VDS = 0
VDS = – 20 V, VGS = 0
VDS = –10 V, I D = – 1 mA
ID = – 3 A, VGS = – 4 VNote3
ID = – 3 A, VGS = – 2.5 VNote3
ID = – 3 A, VDS = – 10 VNote3
VDS = – 10 V
Gate to source breakdown voltage V(BR)GSS ± 10
—
—
V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
– 0.5
—
—
6
—
± 10
– 10
– 1.5
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
0.048 0.060
0.065 0.085
Ω
Ω
Forward transfer admittance
Input capacitance
9.5
—
S
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
1200
630
200
20
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1MHz
—
VGS = – 4 V, ID = – 3 A
VDD – 10 V
Rise time
120
175
140
– 0.9
65
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
– 1.4
—
IF = – 5.5 A, VGS = 0Note3
Body–drain diode reverse
recovery time
trr
ns
IF = – 5.5 A, VGS = 0
diF/ dt = 20 A/µs
Note: 3. Pulse test
2
HITACHI [ HITACHI SEMICONDUCTOR ]
