2SK3157
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
500
200
100
50
I
= 20 A
D
V
= 4 V
GS
10 V
10 A
5 A
20
10
100
10
Drain Current
20
50
12
Gate to Source Voltage
5
0
2
4
8
16
20
1
V
(V)
I
(A)
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
100
30
250
Pulse Test
Tc = –25 °C
200
150
100
50
10
75 °C
25 °C
5, 10 A
I
= 20 A
D
3
1
V
= 4 V
GS
5, 10 A
20 A
0.3
0.1
V
= 10 V
DS
Pulse Test
10 V
0
0
–40
10 50 100
5
20
2
0.1
0.5
1
0.2
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
(A)
D
4
HITACHI [ HITACHI SEMICONDUCTOR ]
