2SK3157
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
150
VGSS
ID
±20
V
20
A
Note1
Drain peak current
ID(pulse)
80
A
Body-drain diode reverse drain current IDR
20
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
20
A
EAR
30
mJ
W
°C
°C
Pch Note2
35
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4 VNote4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V
Drain to source breakdown voltage V(BR)DSS 150
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
1.0
—
—
13
—
—
—
—
—
—
—
—
—
—
±10
10
2.5
70
80
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
50
mΩ
mΩ
S
60
Forward transfer admittance
Input capacitance
22
Ciss
Coss
Crss
td(on)
tr
1750
600
300
18
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1 MHz
—
ID = 10 A, VGS = 10 V
RL = 3 Ω
Rise time
125
400
190
0.9
170
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
—
IF = 20 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
ns
IF = 20 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2
HITACHI [ HITACHI SEMICONDUCTOR ]
