2SK2569
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.5
0.4
0.3
0.2
0.1
20
Pulse Test
Pulse Test
10
5
I
= 0.2 A
D
V
GS
= 2.5 V
4 V
2
1
0.1 A
0.05 A
0.5
0.2
8
0
2
4
6
10
0.01 0.02 0.05 0.1 0.2
0.5
(A)
1
Gate to Source Voltage
V
(V)
GS
Drain Current
I
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
10
0.5
Pulse Test
0.2
0.1
Tc = –25 °C
25 °C
8
6
4
I
= 0.2 A
D
0.05
V
= 2.5 V
0.1 A
GS
75 °C
0.05 A
0.2 A
0.02
0.01
2
0
0.05, 0.1 A
V
= 10 V
DS
4 V
0
Pulse Test
0.005
0.001 0.003 0.01 0.03
0.1
0.3
1
–40
40
80
120
160
Drain Current I (A)
D
Case Temperature Tc (°C)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
