2SK2569
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
50
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±20
V
ID
0.2
A
1
Drain peak current
ID(pulse)
Pch*2
Tch
*
0.4
A
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
150
mW
°C
°C
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
50
—
—
V
ID = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS
—
—
0.5
—
—
—
—
2.0
1.0
±2.0
1.5
2.6
µA
µA
V
VDS = 40 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = 10 µA, VDS = 5 V
ID = 100 mA
Gate to source leak current
Gate to source cutoff voltage
IGSS
VGS(off)
Static drain to source on state RDS(on)1
resistance
Ω
V
GS = 4 V*1
ID = 40 mA
GS = 2.5 V*1
ID = 100 mA
DS = 10 V
Static drain to source on state RDS(on)2
resistance
—
3.1
5.0
—
Ω
V
Foward transfer admittance
|yfs|
0.13
0.23
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
14.0
17.2
1.73
40
—
—
—
—
—
—
—
pF
pF
pF
µs
µs
µs
µs
VDS = 10 V
Coss
VGS = 0
Reverse transfer capacitance Crss
f = 1 MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VGS = 10 V, ID = 100 mA
RL = 300 Ω
86
Turn-off delay time
Fall time
1120
430
Notes 1. Pulse Test
2. Marking is "ZN–"
2
HITACHI [ HITACHI SEMICONDUCTOR ]
