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HS1-1840RH-Q 参数 Datasheet PDF下载

HS1-1840RH-Q图片预览
型号: HS1-1840RH-Q
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射16通道CMOS模拟抗辐射16通道CMOS模拟 [Rad-Hard 16 Channel CMOS Analog Rad-Hard 16 Channel CMOS Analog]
分类和应用:
文件页数/大小: 13 页 / 194 K
品牌: HARRIS [ HARRIS CORPORATION ]
 浏览型号HS1-1840RH-Q的Datasheet PDF文件第1页浏览型号HS1-1840RH-Q的Datasheet PDF文件第2页浏览型号HS1-1840RH-Q的Datasheet PDF文件第3页浏览型号HS1-1840RH-Q的Datasheet PDF文件第5页浏览型号HS1-1840RH-Q的Datasheet PDF文件第6页浏览型号HS1-1840RH-Q的Datasheet PDF文件第7页浏览型号HS1-1840RH-Q的Datasheet PDF文件第8页浏览型号HS1-1840RH-Q的Datasheet PDF文件第9页  
Specifications HS-1840RH  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V  
LIMITS  
GROUP A  
PARAMETER  
SYMBOL  
CONDITIONS  
SUBGROUPS TEMPERATURE  
MIN  
-10  
MAX  
10  
UNITS  
nA  
o
Leakage Current from  
an “On” Driver into the  
Switch (Drain & Source)  
+ID(ON)  
VS = +10V, VD = +10V, VEN =  
0.8V All Unused Inputs = -10V  
1
2, 3  
1
+25 C  
o
o
+125 C, -55 C  
-100  
-10  
100  
10  
nA  
o
-ID(ON)  
VS = -10V, VD = -10V, VEN =  
0.8V, All Unused Inputs = +10V  
+25 C  
nA  
o
o
2, 3  
1, 2, 3  
+125 C, -55 C  
-100  
50  
100  
1000  
nA  
o
o
Switch On Resistance  
+15V R(ON) VS = +15V, ID = -1mA,  
VEN = 0.8V  
-55 C, +25 C,  
o
+125 C  
o
o
-5V R(ON)  
VS = -5V, ID = +1mA, VEN = 0.8V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
-55 C, +25 C,  
50  
50  
-
4000  
2500  
0.5  
-
o
+125 C  
o
o
+5V R(ON) VS = +5V, ID = -1mA, VEN = 0.8V  
-55 C, +25 C,  
o
+125 C  
o
o
Positive Supply  
Current  
I(+)  
I(-)  
VEN = 0.8V  
VEN = 0.8V  
VEN = 4.0V  
VEN = 4.0V  
-55 C, +25 C,  
mA  
mA  
mA  
mA  
o
+125 C  
o
o
Negative Supply  
Current  
-55 C, +25 C,  
-0.5  
-
o
+125 C  
o
o
Positive Standby  
Supply Current  
+ISBY  
-ISBY  
-55 C, +25 C,  
0.5  
-
o
+125 C  
o
o
Negative Standby  
Supply Current  
-55 C, +25 C,  
-0.5  
o
+125 C  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V  
LIMITS  
GROUP A  
PARAMETER  
SYMBOL  
CONDITIONS  
SUBGROUPS TEMPERATURE  
MIN  
MAX  
-
UNITS  
ns  
o
Break-Before-Make  
Time Delay  
TD  
RL = 1000, CL = 50pF  
9
+25 C  
25  
5
-
o
o
10, 11  
9
+125 C, -55 C  
-
ns  
o
Propagation Delay  
Times: Address Inputs  
to I/O Channels  
TON(A),  
TOFF(A)  
RL = 10k, CL = 50pF  
RL = 1000, CL = 50pF  
+25 C  
600  
1000  
ns  
o
o
10, 11  
+125 C, -55 C  
-
ns  
o
Enable to I/O  
TON(EN),  
TOFF(EN)  
9
+25 C  
-
-
600  
ns  
ns  
o
o
10, 11  
+125 C, -55 C  
1000  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Characterized At: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V, Unless Otherwise Specified  
LIMITS  
PARAMETER  
SYMBOL  
CONDITIONS  
NOTE  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
Capacitance Address  
Input  
CA  
+VS = -VS = 0V, f = 1MHz  
1
+25 C  
-
7
pF  
o
Capacitance Channel  
Input  
CS(OFF)  
+VS = -VS = 0V, f = 1MHz  
+VS = -VS = 0V, f = 1MHz  
1
1
1
+25 C  
-
-
5
50  
-
pF  
pF  
dB  
o
Capacitance Channel  
Output  
CD(OFF)  
TOFF(EN)  
+25 C  
o
Off Isolation  
VISO  
VEN = 4.0V, f = 200kHz, CL = 7pF,  
+25 C  
45  
RL = 1k, VS = 3.0VRMS  
NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters and not directly tested. These parameters are  
characterized upon initial design and after major process and/or design changes.  
Spec Number 518022  
4