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HSD32M64D8KP-13 参数 Datasheet PDF下载

HSD32M64D8KP-13图片预览
型号: HSD32M64D8KP-13
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) ,无缓冲DIMM与基于堆栈16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 813 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD32M64D8KP  
Notes :  
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and  
then rounding off to the next higher integer.  
2. Minimum delay is required to complete write.  
3. All parts allow every cycle column address change.  
4. In case of row precharge interrupt, auto precharge and read burst stop.  
.5. For -L/10, tRDL=1CLK and tDAL=1CLK+20ns is also supported .  
( recommend : tRDL=2CLK and tDAL=2CLK + 20ns.)  
AC CHARACTERISTICS  
(AC operating conditions unless otherwise noted)  
-75  
-10L  
PARAMETER  
SYMBOL  
UNIT  
NOTE  
MIN  
MAX  
MIN  
MAX  
CLK cycle time  
CAS latency=3  
CAS latency=3  
tCC  
7.5  
1000  
10  
1000  
ns  
ns  
1
CLK to valid  
output delay  
Output data  
hold time  
tSAC  
5.4  
6
1,2  
CAS latency=3  
tOH  
3
3
ns  
2
CLK high pulse width  
CLK low pulse width  
Input setup time  
tCH  
tCL  
2.5  
2.5  
1.5  
0.8  
1
3
3
2
1
1
ns  
ns  
ns  
ns  
ns  
ns  
3
3
3
3
3
2
tSS  
Input hold time  
tSH  
CLK to output in Low-Z  
CLK to output  
tSLZ  
tSHZ  
CAS latency=3  
5.4  
6
in Hi-Z  
Notes :  
1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.  
3. Assumed input rise and fall time (tr & tf) = 1ns.  
If tr & tf is longer than 1ns, transient time compensation should be considered  
ie., [(tr + tf)/2-1]ns should be added to the parameter.  
SIMPLIFIED TRUTH TABLE  
/R  
A
S
/C  
A
S
D
Q
M
CKE  
CKE  
n
/C  
S
/W  
E
BA  
0,1  
A10/  
AP  
A11  
A9~A0  
n-1  
COMMAND  
NOTE  
Register  
Refresh  
Mode register set  
Auto refresh  
H
H
X
H
L
L
L
L
L
L
X
OP code  
X
1,2  
3
L
L
H
X
Entry  
Self  
3
L
H
X
H
X
H
X
3
3
refres  
h
Exit  
L
H
X
X
X
X
H
Bank active & row address.  
H
L
L
H
H
V
Row address  
Auto  
disable  
precharge  
Read &  
column  
address  
Column  
Address  
(A0 ~ A9)  
L
4
H
H
X
X
L
L
H
H
L
L
H
L
X
X
V
V
Auto  
disable  
Auto  
disable  
precharge  
precharge  
H
L
4,5  
4
Write &  
column  
Column  
Address  
URL:www.hbe.co.kr  
- 7 -  
HANBiT Electronics Co., Ltd  
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