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HSD32M64D8KP-13 参数 Datasheet PDF下载

HSD32M64D8KP-13图片预览
型号: HSD32M64D8KP-13
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) ,无缓冲DIMM与基于堆栈16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 813 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD32M64D8KP  
PIN FUNCTION DESCRIPTION  
PIN  
NAME  
System clock  
Chip enable  
INPUTT FUNCTION  
CLK  
/CE  
Active on the positive going edge to sample all inputs.  
Disables or enables device operation by masking or enabling all inputs except  
CLK, CKE and DQM  
Masks system clock to freeze operation from the next clock cycle.  
CKE should be enabled at least one cycle prior to new command.  
Disable input buffers for power down in standby.  
CKE  
Clock enable  
CKE should be enabled 1CLK+tSS prior to valid command.  
Row/column addresses are multiplexed on the same pins.  
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9  
Selects bank to be activated during row address latch time.  
Selects bank for read/write during column address latch time.  
Latches row addresses on the positive going edge of the CLK with RAS low.  
Enables row access & precharge.  
A0 ~ A11  
BA0 ~ BA1  
/RAS  
Address  
Bank select address  
Row address strobe  
Latches column addresses on the positive going edge of the CLK with CAS low.  
Enables column access.  
/CAS  
Column  
Address  
strobe  
Enables write operation and row precharge.  
Latches data in starting from CAS, WE active.  
/WE  
Write enable  
Makes data output Hi-Z, tSHZ after the clock and masks the output.  
Blocks data input when DQM active. (Byte masking)  
DQM0 ~ 7  
Data  
input/output  
mask  
DQ0 ~ 63  
Vcc/Vss  
Data input/output  
Data inputs/outputs are multiplexed on the same pins.  
Power and ground for the input buffers and the core logic.  
Power supply/ground  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Voltage on Any Pin Relative to Vss  
Voltage on Vcc Supply Relative to Vss  
Power Dissipation  
SYMBOL  
VIN ,OUT  
Vcc  
RATING  
-1.0V to 4.6V  
-1.0V to 4.6V  
16W  
PD  
o
o
Storage Temperature  
TSTG  
-55 C to 150 C  
50mA  
Short Circuit Output Current  
IOS  
Notes:  
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be  
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
DC OPERATING CONDITIONS  
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C))  
PARAMETER  
Supply Voltage  
SYMBOL  
Vcc  
VIH  
MIN  
3.0  
2.0  
-0.3  
2.4  
-
TYP.  
MAX  
3.6  
UNIT  
V
NOTE  
3.3  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
Output Low Voltage  
Input leakage current  
3.0  
Vcc+0.3  
0.8  
V
1
VIL  
0
-
V
2
VOH  
VOL  
-
V
IOH = -2mA  
IOL = 2mA  
3
-
0.4  
V
I LI  
-10  
-
10  
uA  
URL:www.hbe.co.kr  
- 4 -  
HANBiT Electronics Co., Ltd  
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