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HSD32M64D8KP-13 参数 Datasheet PDF下载

HSD32M64D8KP-13图片预览
型号: HSD32M64D8KP-13
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) ,无缓冲DIMM与基于堆栈16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 813 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD32M64D8KP  
Notes :  
1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.  
2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.  
3. Any input 0V £ VIN £ VDDQ  
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.  
CAPACITANCE  
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)  
DESCRIPTION  
SYMBOL  
CCLK  
MIN  
10  
40  
10  
10  
5
MAX  
14  
UNITS  
pF  
Clock  
/RAS, /CAS,/WE, CKE  
CIN  
60.8  
15.2  
15.2  
7.6  
pF  
CKE  
CCKE  
CCS  
pF  
/CS  
pF  
DQM  
CDQM  
CADD  
COUT  
pF  
Address  
DQ (DQ0 ~ DQ7)  
40  
64  
60.8  
96  
pF  
pF  
DC CHARACTERISTICS  
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)  
TEST  
VERSION  
NOT  
E
PARAMETER  
SYMBOL  
UNIT  
CONDITION  
Burst length = 1  
tRC ³ tRC(min)  
IO = 0mA  
-13  
-10L  
Operating current  
(One bank active)  
ICC1  
1440  
1440  
mA  
1
CKE £ VIL(max)  
tCC=10ns  
CKE & CLK £ VIL(max)  
tCC=¥  
Precharge standby current  
in  
power-down mode  
ICC2  
P
32  
32  
mA  
mA  
ICC2PS  
CKE ³ VIH(min)  
CS* ³ VIH(min), tCC=10ns  
Input signals are changed  
one time during 20ns  
CKE ³ VIH(min)  
CLK £ VIL(max), tCC=¥  
Input signals are stable  
ICC2  
N
320  
160  
Precharge standby current  
in  
non power-down mode  
mA  
mA  
mA  
mA  
ICC2NS  
ICC3  
ICC3PS  
P
CKE £ VIL(max), tCC=10ns  
CKE&CLK £ VIL(max)  
tCC=¥  
80  
80  
Active standby current in  
power-down mode  
CKE³ VIH(min),  
CS*³ VIH(min), tCC=10ns  
Input signals are changed  
one time during 20ns  
CKE³ VIH(min)  
CLK £VIL(max), tCC=¥  
Input signals are stable  
IO = 0 mA  
Page burst  
4Banks Activated  
tCCD = 2CLKs  
ICC3  
N
480  
400  
Active standby current in  
non power-down mode  
(One bank active)  
ICC3NS  
Operating current  
(Burst mode)  
ICC4  
1760  
3200  
1600  
3040  
1
2
Refresh current  
ICC5  
ICC6  
tRC ³ tRC(min)  
mA  
mA  
Self refresh current  
CKE £ 0.2V  
C
32  
URL:www.hbe.co.kr  
- 5 -  
HANBiT Electronics Co., Ltd  
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