HANBit
HSD16M64D16A
SIMPLIFIED TRUTH TABLE
/R
A
S
/C
A
S
D
Q
M
CKE
CKE
n
/C
E
/W
E
BA
0,1
A10/
AP
A11
A9~A0
n-1
COMMAND
NOTE
Register
Mode register set
Auto refresh
H
X
H
L
L
L
L
L
L
X
OP code
X
1,2
3
H
L
L
H
X
Entry
Self
3
Refresh
L
H
L
H
X
L
H
X
H
H
X
H
3
refresh
Exit
L
H
X
X
X
X
3
Bank active & row addr.
H
V
V
Row address
Auto
precharge
Read &
column
address
L
Column
4
disable
Auto
H
H
X
L
H
L
H
X
Address
precharge
precharge
precharge
(A0 ~ A9)
H
4,5
disable
Column
Address
(A0 ~ A9)
Auto
Write &
column
address
L
4
disable
X
L
H
L
L
X
V
Auto
H
4,5
6
disable
Burst Stop
H
H
X
X
L
L
L
L
H
H
L
L
X
X
X
Precharg Bank selection
V
X
L
X
e
All banks
H
H
L
X
V
X
X
H
X
V
X
V
X
X
H
X
V
X
V
X
X
H
X
V
Entry
Exit
H
L
L
H
L
X
X
X
Clock suspend or
active power down
X
X
X
H
L
Entry
H
Precharge power
down mode
H
L
Exit
L
H
X
X
V
X
DQM
H
H
X
X
X
7
H
L
X
H
X
X
H
No operation command
H
(V=Valid, X=Don't care, H=Logic high, L=Logic low)
Notes :
1. OP Code : Operand code
A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
URL: www.hbe.co.kr
REV 1.0 (August.2002)
9
HANBit Electronics Co.,Ltd
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
