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HSD16M64D16A-F10 参数 Datasheet PDF下载

HSD16M64D16A-F10图片预览
型号: HSD16M64D16A-F10
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组128Mbyte ( 16Mx64bit ) , DIMM基于8Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 128Mbyte (16Mx64bit), DIMM based on 8Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 10 页 / 155 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD16M64D16A  
PIN FUNCTION DESCRIPTION  
Pin  
CLK  
Name  
System clock  
Input Function  
Active on the positive going edge to sample all inputs.  
/CE  
Chip enable  
Disables or enables device operation by masking or enabling all inputs except  
CLK, CKE and DQM  
CKE  
Clock enable  
Masks system clock to freeze operation from the next clock cycle.  
CKE should be enabled at least one cycle prior to new command.  
Disable input buffers for power down in standby.  
CKE should be enabled 1CLK+tSS prior to valid command.  
Row/column addresses are multiplexed on the same pins.  
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8  
Selects bank to be activated during row address latch time.  
Selects bank for read/write during column address latch time.  
Latches row addresses on the positive going edge of the CLK with RAS low.  
Enables row access & precharge.  
A0 ~ A11  
Address  
BA0 ~ BA1 Bank select address  
/RAS  
/CAS  
/WE  
Row address strobe  
Column address strobe Latches column addresses on the positive going edge of the CLK with CAS low.  
Enables column access.  
Write enable  
Enables write operation and row precharge.  
Latches data in starting from CAS, WE active.  
DQM0 ~ 7 Data input/output mask Makes data output Hi-Z, tSHZ after the clock and masks the output.  
Blocks data input when DQM active. (Byte masking)  
DQ0 ~ 63  
Vcc/Vss  
Data input/output  
Data inputs/outputs are multiplexed on the same pins.  
Power and ground for the input buffers and the core logic.  
Power supply/ground  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Voltage on Any Pin Relative to Vss  
Voltage on Vcc Supply Relative to Vss  
Power Dissipation  
SYMBOL  
VIN ,OUT  
Vcc  
RATING  
-1V to 4.6V  
-1V to 4.6V  
16W  
PD  
o
o
Storage Temperature  
TSTG  
-55 C to 150 C  
Short Circuit Output Current  
IOS  
50mA  
Notes:  
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be  
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
URL: www.hbe.co.kr  
REV 1.0 (August.2002)  
4
HANBit Electronics Co.,Ltd