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S11510-1106 参数 Datasheet PDF下载

S11510-1106图片预览
型号: S11510-1106
PDF下载: 下载PDF文件 查看货源
内容描述: 增强型近红外灵敏度: QE = 40 % ( λ = 1000纳米) [Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)]
分类和应用:
文件页数/大小: 8 页 / 459 K
品牌: HAMAMATSU [ HAMAMATSU CORPORATION ]
 浏览型号S11510-1106的Datasheet PDF文件第1页浏览型号S11510-1106的Datasheet PDF文件第2页浏览型号S11510-1106的Datasheet PDF文件第3页浏览型号S11510-1106的Datasheet PDF文件第4页浏览型号S11510-1106的Datasheet PDF文件第5页浏览型号S11510-1106的Datasheet PDF文件第6页浏览型号S11510-1106的Datasheet PDF文件第8页  
CCD image sensors  
S11510 series  
Dimensional outline (unit: mm)  
3.3 0.35  
A
24  
13  
12  
1
Index mark  
Index mark  
27.94 0.3  
38.10 0.4  
Photosensitive surface  
Active area  
Type no.  
A
B
S11510-1006 14.336 (H) 0.896 (V)  
S11510-1106 28.672 (H) 0.896 (V)  
2.54 0.13  
0.46 0.05  
1.27 0.2  
KMPDA0265EA  
Pin connections  
Pin no.  
1
Symbol  
OS  
OD  
Function  
Remark (standard operation)  
RL=100 kΩ  
+24 V  
Output transistor source  
Output transistor drain  
Output gate  
2
3
OG  
+5 V  
4
SG  
Summing gate  
Same pulse as P4H  
5
SS  
Substrate  
GND  
6
RD  
Reset drain  
+12 V  
7
8
9
P4H  
P3H  
P2H  
P1H  
IG2H  
IG1H  
OFG  
OFD  
ISH  
ISV  
CCD horizontal register clock-4  
CCD horizontal register clock-3  
CCD horizontal register clock-2  
CCD horizontal register clock-1  
Test point (horizontal input gate-2)  
Test point (horizontal input gate-1)  
Over ow gate  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
-8 V  
-8 V  
+12 V  
+12 V  
Connect to RD  
Connect to RD  
GND  
+12 V  
-8 V  
Over ow drain  
Test point (horizontal input source)  
Test point (vertical input source)  
Substrate  
SS  
RD  
Reset drain  
IG2V  
IG1V  
P2V  
P1V  
TG  
Test point (vertical input gate-2)  
Test point (vertical input gate-1)  
CCD vertical register clock-2  
CCD vertical register clock-1  
Transfer gate  
-8 V  
Same pulse as P2V  
RG  
Reset gate  
7
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