MBM29LV160TE/BE-70/90/12
Table 10 Common Flash Memory Interface Code
DQ0 to DQ15
DQ0 to DQ15
Description
A0 to A6
Description
A0 to A6
Query-unique ASCII string
“QRY”
10h
11h
12h
0051h
0052h
0059h
Erase Block Region 1
Information
2Dh
2Eh
2Fh
30h
0000h
0000h
0040h
0000h
Primary OEM Command Set
2h: AMD/FJ standard type
13h
14h
0002h
0000h
Erase Block Region 2
Information
31h
32h
33h
34h
0001h
0000h
0020h
0000h
Address for Primary
Extended Table
15h
16h
0040h
0000h
Alternate OEM Command
Set (00h = not applicable)
17h
18h
0000h
0000h
Erase Block Region 3
Information
35h
36h
37h
38h
0000h
0000h
0080h
0000h
Address for Alternate OEM
Extended Table
19h
1Ah
0000h
0000h
VCC Min. (write/erase)
D7-4: volt, D3-0: 100 mvolt
1Bh
0027h
Erase Block Region 4
Information
39h
3Ah
3Bh
3Ch
001Eh
0000h
0000h
0001h
VCC Max. (write/erase)
D7-4: volt, D3-0: 100 mvolt
1Ch
0036h
VPP Min. voltage
1Dh
1Eh
1Fh
0000h
0000h
0004h
Query-unique ASCII string
“PRI”
40h
41h
42h
0050h
0052h
0049h
VPP Max. voltage
Typical timeout per single
byte/word write 2N
s
Major version number, ASCII
Minor version number, ASCII
43h
44h
45h
0031h
0031h
0000h
µ
Typical timeout for Min. size
buffer write 2N
20h
21h
22h
23h
24h
25h
26h
27h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
0015h
s
µ
Address Sensitive Unlock
0 = Required
1 = Not Required
Typical timeout per individual
block erase 2N ms
Erase Suspend
46h
47h
48h
0002h
0001h
0001h
Typical timeout for full chip
erase 2N ms
0 = Not Supported
1 = To Read Only
2 = To Read & Write
Max. timeout for byte/word
write 2N times typical
Sector Protect
Max. timeout for buffer write
2N times typical
0 = Not Supported
X = Number of sectors in per
group
Max. timeout per individual
block erase 2N times typical
Sector Temporary Unprotect
00 = Not Supported
01 = Supported
Max. timeout for full chip
erase 2N times typical
Device Size = 2N byte
Sector Protection Algorithm
49h
4Ah
04h
00h
Number of Sector for Bank 2
00h = Not Supported
Flash Device Interface
description
28h
29h
0002h
0000h
Burst Mode Type
00h = Not Supported
4Bh
4Ch
00h
00h
Max. number of byte in
multi-byte write = 2N
2Ah
2Bh
0000h
0000h
Page Mode Type
00h = Not Supported
Number of Erase Block
Regions within device
2Ch
0004h
26
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