2SK3673-01MR
FUJI POWER MOSFET
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS=f(Qg):ID=10A,Tch=25°C
VGS(th)=f(Tch):VDS=VGS,ID=250µA
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vcc= 140V
350V
560V
max.
min.
6
4
2
0
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
101
100
10
1
Ciss
100
10-1
10-2
10-3
Coss
Crss
0.1
100
101
102
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=70V
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
103
102
101
100
700
600
500
400
300
200
100
0
IAS=4A
tf
IAS=6A
td(off)
td(on)
tr
IAS=10A
10-1
100
101
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
FUJI [ FUJI ELECTRIC ]
