2SK3673-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
700
Unit
V
Drain-source voltage
VDS
V
VDSX *5
ID
700
±10
±40
±30
10
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
Equivalent circuit schematic
V
Gate-source voltage
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
mJ
kV/µs
kV/µs
W
EAS*1
242.2
40
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
2.16
Gate(G)
80
+150
-55 to +150
Operating and storage
temperature range
Isolation Voltage
°C
Source(S)
Tstg
°C
Viso *6
2
kVrms
<
*1 L=4.45mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
<
<
*4 VDS 700V *5 VGS=-30V *6 t=60sec, f=60Hz
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
V
Drain-source breakdown voltaget
Gate threshold voltage
ID=250 A
VGS=0V
VDS=VGS
700
µ
V
ID= 250 A
3.0
5.0
µA
25
VDS=700V VGS=0V
VDS=560V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
250
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
ID=5A
VDS=0V
100
VGS=10V
Ω
S
0.91
9.5
900
1.18
5
ID=5A VDS=25V
VDS=25V
Ciss
pF
1350
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
140
8
210
12
33
9
Reverse transfer capacitance
Turn-on time ton
f=1MHz
ns
VCC=300V ID=5A
VGS=10V
22
6
td(off)
tf
Turn-off time toff
40
9
60
14
RGS=10 Ω
QG
QGS
QGD
IAV
nC
Total Gate Charge
25
4
37.5
VCC=350V
ID=10A
6
Gate-Source Charge
Gate-Drain Charge
8.5
13
VGS=10V
10
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=4.45mH Tch=25°C
VSD
trr
Qrr
0.90
2.75
1.50
V
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs
Tch=25°C
µs
µC
14.0
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.563
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
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