2SK3673-01MR
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
16
12
8
20V
10V
8.0V
7.0V
6.5V
6.0V
4
VGS=5.5V
0
0
25
50
75
100
125
150
0
5
10
15
20
25
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
10
1
0.1
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.00
1.75
1.50
1.25
1.00
0.75
VGS=5.5V
6.0V
6.5V
7.0V
8.0V
10V
20V
max.
typ.
-50
-25
0
25
50
75
100
125
150
0
4
8
12
16
Tch [°C]
ID [A]
2
FUJI [ FUJI ELECTRIC ]
