TYPICAL CHARACTERISTICS
38
34
70
64
0
G
ps
−4
30
58
−8
PAE
−12
−16
−20
−24
26
22
18
14
10
52
46
40
34
28
V
= 26 Vdc, P = 100 W CW
out
DD
I
= 120 mA, I
= 950 mA
DQ1
DQ2
IRL
−28
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ Pout = 100 Watts CW
−4
38
34
52
46
G
ps
−8
30
40
−12
−16
−20
−24
−28
PAE
IRL
26
22
18
14
10
34
28
22
16
10
V
I
= 28 Vdc, P = 50 W Avg.
out
DD
= 230 mA, I
= 870 mA
DQ1
DQ2
−30
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 6. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ Pout = 50 Watts Avg.
36
36
I
= 180 mA
DQ1
I
= 150 mA
DQ1
I
= 1420 mA
DQ2
35
34
33
I
= 1190 mA
DQ2
35
34
33
32
31
I
= 950 mA
DQ2
I
= 120 mA
DQ1
I
= 90 mA
DQ1
32
31
30
I
= 590 mA
DQ2
V
= 26 Vdc
V
= 26 Vdc
f = 945 MHz
DD
DD
I
= 470 mA
10
DQ2
f = 945 MHz
I
= 60 mA
DQ1
1
100
200
1
10
P , OUTPUT POWER (WATTS) CW
out
100
200
P
, OUTPUT POWER (WATTS) CW
out
Figure 7. Power Gain versus Output Power
@ IDQ1 = 120 mA
Figure 8. Power Gain versus Output Power
@ IDQ2 = 950 mA
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
6