Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 66 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
10
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.5
—
2
3.5
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 290 μAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 950 mAdc)
2.7
8.6
0.4
DS
D
Fixture Gate Quiescent Voltage
(V = 26 Vdc, I = 950 mAdc, Measured in Functional Test)
V
6
12
0.8
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1 Adc)
V
0.05
GS
D
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 26 Vdc, P = 100 W CW, I
= 120 mA, I = 950 mA, f = 960 MHz
DQ2
DD
out
DQ1
Power Gain
G
31
33.5
36
-10
—
dB
ps
Input Return Loss
Power Added Efficiency
IRL
PAE
—
52
-15
54
dB
%
W
P
@ 1 dB Compression Point, CW
P1dB
100
112
—
out
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V = 28 Vdc, P = 50 W Avg., I = 230 mA,
DQ1
DD
out
I
= 870 mA, 869-894 MHz and 920-960 MHz EDGE Modulation
DQ2
Power Gain
G
—
—
—
—
—
35.5
39
—
—
—
—
—
dB
%
ps
Power Added Efficiency
PAE
EVM
SR1
SR2
Error Vector Magnitude
2
% rms
dBc
dBc
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
-63
-81
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
3
FREESCALE [ Freescale ]
