Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +66
-0.5, +6
-65 to +200
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
°C
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
GSM Application
(P = 100 W CW)
out
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
= 120 mA
= 950 mA
1.82
0.38
DQ1
DQ2
GSM EDGE Application
(P = 50 W Avg.)
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 230 mA
= 870 mA
1.77
0.44
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
B (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 66 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
10
GS
DS
Stage 1 — On Characteristics
Gate Threshold Voltage
V
V
1.5
—
6
2
3.5
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 35 μAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 120 mAdc)
2.7
9.4
DS
D
Fixture Gate Quiescent Voltage
(V = 26 Vdc, I = 120 mAdc, Measured in Functional Test)
V
12
DD
D
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
(continued)
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
2
FREESCALE [ Freescale ]
