TYPICAL CHARACTERISTICS
10
8
50
40
30
V
= 28 Vdc
= 230 mA
= 870 mA
DD
DQ1
DQ2
I
I
f = 945 MHz
6
85_C
PAE
4
2
0
20
10
0
−30_C
T
= 25_C
C
EVM
1
10
, OUTPUT POWER (WATTS) AVG.
100
P
out
Figure 21. EVM and Power Added Efficiency
versus Output Power @ 945 MHz
10
8
50
40
30
V
= 28 Vdc
= 230 mA
= 870 mA
DD
DQ1
DQ2
I
I
f = 880 MHz
6
85_C
PAE
4
2
0
20
10
0
25_C
EVM
T
= −30_C
C
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 22. EVM and Power Added Efficiency
versus Output Power @ 880 MHz
40
30
20
10
0
38
36
34
32
S21
T
= −30_C
C
−5
25_C
85_C
−10
−15
−20
−25
S11
30
28
26
0
V
= 26 Vdc, P = 60 W CW
out
DD
V
= 26 Vdc
= 120 mA, I
DD
I
= 120 mA, I = 950 mA
DQ2
DQ1
I
= 950 mA
1200
DQ1
DQ2
−10
400
600
800
1000
1400
1600
820
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 24. Power Gain versus Frequency
Figure 23. Broadband Frequency Response
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
9
FREESCALE [ Freescale ]
