Table 3. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
V
2.0
3.0
—
3.0
4.0
0.3
1.5
4.0
5.0
0.6
—
Vdc
Vdc
Vdc
S
GS(th)
(V = 10 Vdc, I = 150 μAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 200 mAdc)
V
GS(q)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.0 Adc)
V
DS(on)
GS
D
Forward Transconductance
(V = 10 Vdc, I = 1.0 Adc)
g
fs
—
DS
D
Dynamic Characteristics
Input Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
DS
C
—
—
—
43
23
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 26 Vdc, V = 0, f = 1.0 MHz)
C
rss
1.4
DS
GS
Functional Tests (in Freescale Test Fixture, 50 ohm system)
Common-Source Power Gain
G
9
30
—
—
9
10.5
35
—
—
-29
-9
—
—
—
-9
—
—
dB
%
ps
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
IMD
IRL
-32
-15
10.4
35
dBc
dB
dB
%
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 30 W, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common-Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
η
—
—
—
8.5
35
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
IMD
IRL
-34
-15
9.5
45
dBc
dB
dB
%
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 30 W PEP, I = 200 mA,
DD
out
DQ
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common-Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 30 W CW, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 30 W CW, I = 200 mA,
DD
out
DQ
f1 = 2000.0 MHz)
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
2
FREESCALE [ Freescale ]
